- Shenzhen Kexinxin Technology Co., Ltd.
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Shenzhen, Guangdong, China
- Main products: Integrated Circuits, Tantalum Capacitor, Mosfet, Crystal, Diodes
Home > Products > MOSFET > SI7998DP-T1-GE3 Vishay Semiconductors MOSFET 30V Vds 20V Vgs PowerPAK SO-8
SI7998DP-T1-GE3 Vishay Semiconductors MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Product Details
| Brand Name | Vishay Semiconductors | Place of Origin | China | |
| Model Number | SI7998DP-T1-GE3 | Type | Other, MOSFET | |
| Package Type | Surface Mount |
Product Description
Factory
Mfr. #:
SI7998DP-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerPAK-SO-8
Transistor Polarity: N-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 25 A, 30 A
Rds On - Drain-Source Resistance: 9.3 mOhms, 5.3 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.2 V
Qg - Gate Charge: 26 nC, 48 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 22 W, 40 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI7
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Vishay Semiconductors
Configuration: Dual
Fall Time: 10 ns, 13 ns
Forward Transconductance - Min: 45 S, 71 S
Product Type: MOSFET
Rise Time: 15 ns, 17 ns
factory pack quantiy: 3000
Subcategory: MOSFETs
Transistor Type: 2 N-Channel
Typical Turn-Off Delay Time: 22 ns, 35 ns
Typical Turn-On Delay Time: 20 ns, 26 ns
Part # Aliases: SI7998DP-GE3
Unit Weight: 0.017870 oz
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